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Found 16 publication records. Showing 16 according to the selection in the facets
| Hits ?▲ |
Authors |
Title |
Venue |
Year |
Link |
Author keywords |
| 1 | André Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné |
On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum.  |
Microelectronics Reliability  |
2012 |
DBLP DOI BibTeX RDF |
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| 1 | R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, J. Mekki, André Touboul, Frédéric Saigné |
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. |
Microelectronics Reliability |
2011 |
DBLP DOI BibTeX RDF |
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| 1 | M. L. Bourqui, L. Béchou, Olivier Gilard, Y. Deshayes, P. Del Vecchio, L. S. How, F. Rosala, Y. Ousten, André Touboul |
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. |
Microelectronics Reliability |
2008 |
DBLP DOI BibTeX RDF |
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| 1 | M. Faqir, G. Verzellesi, Fausto Fantini, Francesca Danesin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua |
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. |
Microelectronics Reliability |
2007 |
DBLP DOI BibTeX RDF |
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| 1 | Nathalie Labat, André Touboul |
Editorial. |
Microelectronics Reliability |
2007 |
DBLP DOI BibTeX RDF |
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| 1 | F. Essely, F. Darracq, Vincent Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, André Touboul, Dean Lewis |
Application of various optical techniques for ESD defect localization. |
Microelectronics Reliability |
2006 |
DBLP DOI BibTeX RDF |
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| 1 | A. Sozza, A. Curutchet, Christian Dua, N. Malbert, Nathalie Labat, André Touboul |
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. |
Microelectronics Reliability |
2006 |
DBLP DOI BibTeX RDF |
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| 1 | N. Guitard, F. Essely, D. Trémouilles, M. Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis |
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. |
Microelectronics Reliability |
2005 |
DBLP DOI BibTeX RDF |
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| 1 | N. Ismail, N. Malbert, Nathalie Labat, André Touboul, J. L. Muraro, F. Brasseau, D. Langrez |
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. |
Microelectronics Reliability |
2005 |
DBLP DOI BibTeX RDF |
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| 1 | A. Curutchet, N. Malbert, Nathalie Labat, André Touboul, C. Gaquière, A. Minko, M. Uren |
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. |
Microelectronics Reliability |
2003 |
DBLP DOI BibTeX RDF |
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| 1 | J. C. Martin, C. Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin |
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. |
Microelectronics Reliability |
2003 |
DBLP DOI BibTeX RDF |
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| 1 | M. Belhaj, C. Maneux, Nathalie Labat, André Touboul, P. Bove |
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. |
Microelectronics Reliability |
2003 |
DBLP DOI BibTeX RDF |
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| 1 | Nathalie Labat, André Touboul |
Editorial. |
Microelectronics Reliability |
2003 |
DBLP DOI BibTeX RDF |
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| 1 | Nathalie Labat, N. Malbert, B. Lambert, André Touboul, F. Garat, B. Proust |
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. |
Microelectronics Reliability |
2002 |
DBLP DOI BibTeX RDF |
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| 1 | Dean Lewis, Vincent Pouget, T. Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu |
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. |
Microelectronics Reliability |
2001 |
DBLP BibTeX RDF |
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| 1 | B. Lambert, N. Malbert, Nathalie Labat, F. Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut |
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. |
Microelectronics Reliability |
2001 |
DBLP BibTeX RDF |
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