Search results for "G. Ghibaudo"

Hits ?▲	Authors	Title	Venue	Year	Link
1	Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo	Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.	J. Solid-State Circuits	2012	DBLP DOI BibTeX RDF
1	L. Gerrer, M. Rafik, G. Ribes, G. Ghibaudo, E. Vincent	Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.	Microelectronics Reliability	2010	DBLP DOI BibTeX RDF
1	M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo	Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.	Microelectronics Reliability	2008	DBLP DOI BibTeX RDF
1	G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo	Impact of silicon nitride CESL on NLDEMOS transistor reliability.	Microelectronics Reliability	2008	DBLP DOI BibTeX RDF
1	G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo	Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride.	Microelectronics Reliability	2007	DBLP DOI BibTeX RDF
1	Gilles Reimbold, J. Mitard, X. Garros, Charles Leroux, G. Ghibaudo, F. Martin	Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.	Microelectronics Reliability	2007	DBLP DOI BibTeX RDF
1	Charles Leroux, Gérard Ghibaudo, Gilles Reimbold	Accurate determination of flat band voltage in advanced MOS structure.	Microelectronics Reliability	2007	DBLP DOI BibTeX RDF
1	E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer	Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.	Microelectronics Reliability	2005	DBLP DOI BibTeX RDF
1	D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo	On the SILC mechanism in MOSFET's with ultrathin oxides.	Microelectronics Reliability	2005	DBLP DOI BibTeX RDF
1	G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo	Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.	Microelectronics Reliability	2005	DBLP DOI BibTeX RDF
1	G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo	Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.	Microelectronics Reliability	2005	DBLP DOI BibTeX RDF
1	F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo	On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.	Microelectronics Reliability	2003	DBLP DOI BibTeX RDF
1	G. Ghibaudo, E. Vincent	Guest Editorial.	Microelectronics Reliability	2003	DBLP DOI BibTeX RDF
1	F. Lime, G. Ghibaudo, B. Guillaumot	Charge trapping in SiO2/HfO2/TiN gate stack.	Microelectronics Reliability	2003	DBLP DOI BibTeX RDF
1	M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader	Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.	Microelectronics Reliability	2003	DBLP DOI BibTeX RDF
1	B. Cretu, Francis Balestra, G. Ghibaudo, G. Guégan	Origin of hot carrier degradation in advanced nMOSFET devices.	Microelectronics Reliability	2002	DBLP DOI BibTeX RDF
1	F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo	Gate oxide Reliability assessment optimization.	Microelectronics Reliability	2002	DBLP DOI BibTeX RDF
1	G. Ghibaudo, T. Boutchacha	Electrical noise and RTS fluctuations in advanced CMOS devices.	Microelectronics Reliability	2002	DBLP DOI BibTeX RDF
1	M. Fadlallah, G. Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan	Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs.	Microelectronics Reliability	2002	DBLP DOI BibTeX RDF
1	F. Lime, G. Ghibaudo, G. Guégan	Stress induced leakage current at low field in ultra thin oxides.	Microelectronics Reliability	2001	DBLP BibTeX RDF
1	R. Clerc, A. S. Spinelli, G. Ghibaudo, Charles Leroux, G. Pananakakis	Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).	Microelectronics Reliability	2001	DBLP DOI BibTeX RDF
1	F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo	Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.	Microelectronics Reliability	2001	DBLP BibTeX RDF
1	M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, Jalal Jomaah, G. Ghibaudo	Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics.	Microelectronics Reliability	2001	DBLP BibTeX RDF
1	S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo	Failures in ultrathin oxides: Stored energy or carrier energy driven?	Microelectronics Reliability	2001	DBLP BibTeX RDF
1	Sébastien Haendler, Jalal Jomaah, G. Ghibaudo, Francis Balestra	Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.	Microelectronics Reliability	2001	DBLP DOI BibTeX RDF
1	F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo	Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.	Microelectronics Reliability	2001	DBLP DOI BibTeX RDF
1	P. O'Sullivan, R. Clerc, Kevin G. McCarthy, Alan Mathewson, G. Ghibaudo	Direct tunnelling models for circuit simulation.	Microelectronics Reliability	2001	DBLP DOI BibTeX RDF
1	S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo	Body effect induced wear-out acceleration in ultra-thin oxides.	Microelectronics Reliability	2001	DBLP DOI BibTeX RDF

Publications of G. Ghibaudo Gérard Ghibaudo ( http://dblp.L3S.de/Authors/G._Ghibaudo )