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Found 14 publication records. Showing 14 according to the selection in the facets
| Hits ?▲ |
Authors |
Title |
Venue |
Year |
Link |
Author keywords |
| 1 | C. Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai |
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer.  |
Microelectronics Reliability  |
2012 |
DBLP DOI BibTeX RDF |
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| 1 | Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet |
Si nanowire FET and its modeling. |
SCIENCE CHINA Information Sciences |
2011 |
DBLP DOI BibTeX RDF |
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| 1 | D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai |
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. |
Microelectronics Reliability |
2011 |
DBLP DOI BibTeX RDF |
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| 1 | Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai |
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. |
Microelectronics Reliability |
2011 |
DBLP DOI BibTeX RDF |
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| 1 | Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst |
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. |
Microelectronics Reliability |
2011 |
DBLP DOI BibTeX RDF |
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| 1 | Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai |
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs. |
IEICE Transactions |
2010 |
DBLP BibTeX RDF |
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| 1 | Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai |
Equivalent Noise Temperature Representation for Scaled MOSFETs. |
IEICE Transactions |
2010 |
DBLP BibTeX RDF |
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| 1 | Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai |
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. |
Microelectronics Reliability |
2010 |
DBLP DOI BibTeX RDF |
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| 1 | Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, T. Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai |
SrO capping effect for La2O3/Ce-silicate gate dielectrics. |
Microelectronics Reliability |
2010 |
DBLP DOI BibTeX RDF |
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| 1 | Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai |
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. |
Microelectronics Reliability |
2010 |
DBLP DOI BibTeX RDF |
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| 1 | Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai |
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. |
Microelectronics Reliability |
2009 |
DBLP DOI BibTeX RDF |
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| 1 | Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai |
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. |
Microelectronics Reliability |
2008 |
DBLP DOI BibTeX RDF |
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| 1 | Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai |
Parasitic Effects in Multi-Gate MOSFETs. |
IEICE Transactions |
2007 |
DBLP DOI BibTeX RDF |
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| 1 | Kuniyuki Kakushima, T. Bourouina, T. Sarnet, G. Kerrien, D. Débarre, J. Boulmer, Hiroyuki Fujita |
Silicon periodic nano-structures obtained by laser exposure of nano-wires. |
Microelectronics Journal |
2005 |
DBLP DOI BibTeX RDF |
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Displaying result #1 - #14 of 14 (100 per page; Change: )
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