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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsid/PanditS11>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Chandan_Kumar_Sarkar>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Srabanti_Pandit>
foaf:homepage <http://dx.doi.org/10.1109%2FVLSID.2011.16>
foaf:homepage <http://dx.doi.org/10.1109/VLSID.2011.16>
dc:identifier DBLP conf/vlsid/PanditS11 (xsd:string)
dc:identifier DOI 10.1109%2FVLSID.2011.16 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
rdfs:label Modeling the Effect of Gate Fringing and Dopant Redistribution on the Inverse Narrow Width Effect of Narrow Channel Shallow Trench Isolated MOSFETs. (xsd:string)
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Chandan_Kumar_Sarkar>
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Srabanti_Pandit>
swrc:pages 195-200 (xsd:string)
dcterms:partOf <http://dblp.l3s.de/d2r/resource/publications/conf/vlsid/2011>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsid/PanditS11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsid/PanditS11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsid/vlsid2011.html#PanditS11>
rdfs:seeAlso <http://dx.doi.org/10.1109/VLSID.2011.16>
swrc:series <http://dblp.l3s.de/d2r/resource/conferences/vlsid>
dc:title Modeling the Effect of Gate Fringing and Dopant Redistribution on the Inverse Narrow Width Effect of Narrow Channel Shallow Trench Isolated MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document