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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/integration/LinKL10>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Sheng_Lin>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim>
foaf:homepage <http://dx.doi.org/10.1016%2Fj.vlsi.2010.01.003>
foaf:homepage <http://dx.doi.org/10.1016/j.vlsi.2010.01.003>
dc:identifier DBLP journals/integration/LinKL10 (xsd:string)
dc:identifier DOI 10.1016%2Fj.vlsi.2010.01.003 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
swrc:journal <http://dblp.l3s.de/d2r/resource/journals/integration>
rdfs:label Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability. (xsd:string)
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Sheng_Lin>
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim>
swrc:number 2 (xsd:string)
swrc:pages 176-187 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/integration/LinKL10/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/integration/LinKL10>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/integration/integration43.html#LinKL10>
rdfs:seeAlso <http://dx.doi.org/10.1016/j.vlsi.2010.01.003>
dc:title Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 43 (xsd:string)