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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/JohA12>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Jes%C3%BAs_A._del_Alamo>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Jungwoo_Joh>
foaf:homepage <http://dx.doi.org/10.1016%2Fj.microrel.2011.09.008>
foaf:homepage <http://dx.doi.org/10.1016/j.microrel.2011.09.008>
dc:identifier DBLP journals/mr/JohA12 (xsd:string)
dc:identifier DOI 10.1016%2Fj.microrel.2011.09.008 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
swrc:journal <http://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Impact of gate placement on RF power degradation in GaN high electron mobility transistors. (xsd:string)
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Jes%C3%BAs_A._del_Alamo>
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Jungwoo_Joh>
swrc:number 1 (xsd:string)
swrc:pages 33-38 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/JohA12/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/JohA12>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr52.html#JohA12>
rdfs:seeAlso <http://dx.doi.org/10.1016/j.microrel.2011.09.008>
dc:title Impact of gate placement on RF power degradation in GaN high electron mobility transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 52 (xsd:string)