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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/MroczynskiB12>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Robert_Mroczynski>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Romuald_B._Beck>
foaf:homepage <http://dx.doi.org/10.1016%2Fj.microrel.2011.08.010>
foaf:homepage <http://dx.doi.org/10.1016/j.microrel.2011.08.010>
dc:identifier DBLP journals/mr/MroczynskiB12 (xsd:string)
dc:identifier DOI 10.1016%2Fj.microrel.2011.08.010 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
swrc:journal <http://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications. (xsd:string)
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Robert_Mroczynski>
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Romuald_B._Beck>
swrc:number 1 (xsd:string)
swrc:pages 107-111 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/MroczynskiB12/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/MroczynskiB12>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr52.html#MroczynskiB12>
rdfs:seeAlso <http://dx.doi.org/10.1016/j.microrel.2011.08.010>
dc:title Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 52 (xsd:string)