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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/Alioto11>
dc:creator <http://dblp.l3s.de/d2r/resource/authors/Massimo_Alioto>
foaf:homepage <http://dx.doi.org/10.1109%2FTVLSI.2010.2040094>
foaf:homepage <http://dx.doi.org/10.1109/TVLSI.2010.2040094>
dc:identifier DBLP journals/tvlsi/Alioto11 (xsd:string)
dc:identifier DOI 10.1109%2FTVLSI.2010.2040094 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <http://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Comparative Evaluation of Layout Density in 3T, 4T, and MT FinFET Standard Cells. (xsd:string)
foaf:maker <http://dblp.l3s.de/d2r/resource/authors/Massimo_Alioto>
swrc:number 5 (xsd:string)
swrc:pages 751-762 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/Alioto11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/Alioto11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi19.html#Alioto11>
rdfs:seeAlso <http://dx.doi.org/10.1109/TVLSI.2010.2040094>
dc:title Comparative Evaluation of Layout Density in 3T, 4T, and MT FinFET Standard Cells. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 19 (xsd:string)