Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18¬Ķm Process Technology.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/apccas/ChenZWKXPMQZ22
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/apccas/ChenZWKXPMQZ22
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Langtao_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ling_Peng
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ming_Qiao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Rubin_Xie
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Zhou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yantu_Mo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ying_Kong
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ying_Wang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FAPCCAS55924.2022.10090399
>
foaf:
homepage
<
https://doi.org/10.1109/APCCAS55924.2022.10090399
>
dc:
identifier
DBLP conf/apccas/ChenZWKXPMQZ22
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FAPCCAS55924.2022.10090399
(xsd:string)
dcterms:
issued
2022
(xsd:gYear)
rdfs:
label
Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18¬Ķm Process Technology.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Langtao_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ling_Peng
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ming_Qiao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Rubin_Xie
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xin_Zhou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yantu_Mo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ying_Kong
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ying_Wang
>
swrc:
pages
588-591
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/apccas/2022
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/apccas/ChenZWKXPMQZ22/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/apccas/ChenZWKXPMQZ22
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/apccas/apccas2022.html#ChenZWKXPMQZ22
>
rdfs:
seeAlso
<
https://doi.org/10.1109/APCCAS55924.2022.10090399
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/apccas
>
dc:
title
Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18¬Ķm Process Technology.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document