Graphene nanodots with high-k dielectrics for flash memory applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/asicon/ChangTWL17
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/asicon/ChangTWL17
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chao-Sung_Lai
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Han-Hsiang_Tai
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jer-Chyi_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kai-Ping_Chang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FASICON.2017.8252506
>
foaf:
homepage
<
https://doi.org/10.1109/ASICON.2017.8252506
>
dc:
identifier
DBLP conf/asicon/ChangTWL17
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FASICON.2017.8252506
(xsd:string)
dcterms:
issued
2017
(xsd:gYear)
rdfs:
label
Graphene nanodots with high-k dielectrics for flash memory applications.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chao-Sung_Lai
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Han-Hsiang_Tai
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jer-Chyi_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kai-Ping_Chang
>
swrc:
pages
433-435
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/asicon/2017
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/asicon/ChangTWL17/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/asicon/ChangTWL17
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/asicon/asicon2017.html#ChangTWL17
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ASICON.2017.8252506
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/asicon
>
dc:
title
Graphene nanodots with high-k dielectrics for flash memory applications.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document