Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Changfeng_Wang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jie_Zhang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Ming_Tian>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Ran_Cheng>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yan-Yan_Zhang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yi_Zhao>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Zhimei_Cai>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FASICON47005.2019.8983454>
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dc:title	Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters. (xsd:string)
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