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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/asicon/HigashinoATKTK15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haruo_Kobayashi_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hitoshi_Aoki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masaki_Kazumi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masashi_Higashino>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nobukazu_Tsukiji>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takuya_Totsuka>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASICON.2015.7516945>
foaf:homepage <https://doi.org/10.1109/ASICON.2015.7516945>
dc:identifier DBLP conf/asicon/HigashinoATKTK15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASICON.2015.7516945 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haruo_Kobayashi_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hitoshi_Aoki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masaki_Kazumi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masashi_Higashino>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nobukazu_Tsukiji>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takuya_Totsuka>
swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ASICON.2015.7516945>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/asicon>
dc:title Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document