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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/asicon/KongHGCGNYY21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Yi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hongqiang_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiacheng_Gao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiaxin_Guo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Moufu_Kong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sadaf_Ali_Nafees>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zewei_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zongqi_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASICON52560.2021.9620225>
foaf:homepage <https://doi.org/10.1109/ASICON52560.2021.9620225>
dc:identifier DBLP conf/asicon/KongHGCGNYY21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASICON52560.2021.9620225 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Yi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hongqiang_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiacheng_Gao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiaxin_Guo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Moufu_Kong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sadaf_Ali_Nafees>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zewei_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zongqi_Chen>
swrc:pages 1-4 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/asicon/2021>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/asicon/KongHGCGNYY21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/asicon/KongHGCGNYY21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/asicon/asicon2021.html#KongHGCGNYY21>
rdfs:seeAlso <https://doi.org/10.1109/ASICON52560.2021.9620225>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/asicon>
dc:title A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document