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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/asicon/KuwanaM021>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anna_Kuwana>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haruo_Kobayashi_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun-Ichi_Matsuda>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASICON52560.2021.9620319>
foaf:homepage <https://doi.org/10.1109/ASICON52560.2021.9620319>
dc:identifier DBLP conf/asicon/KuwanaM021 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASICON52560.2021.9620319 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label Analysis of Switching Characteristics of Wide SOA and High Reliability 100 V N-LDMOS Transistor with Dual RESURF and Grounded Field Plate Structure. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anna_Kuwana>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haruo_Kobayashi_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun-Ichi_Matsuda>
swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/asicon/asicon2021.html#KuwanaM021>
rdfs:seeAlso <https://doi.org/10.1109/ASICON52560.2021.9620319>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/asicon>
dc:title Analysis of Switching Characteristics of Wide SOA and High Reliability 100 V N-LDMOS Transistor with Dual RESURF and Grounded Field Plate Structure. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document