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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/asicon/TsutsuiKHNNWMSM17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Nakajima>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/H._Ohashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Iwai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hitoshi_Wakabayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ichiro_Omura>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Iriya_Muneta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/K._Itou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/K._Sato>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuo_Tsutsui>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kuniyuki_Kakushima>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Fukui>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masaharu_Kobayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Suzuki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shinichi_Nishizawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/T._Takakura>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takuya_Hoshii>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takuya_Saraya>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tomoko_Matsudai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshiro_Hiramoto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wataru_Saito>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Numasawa>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASICON.2017.8252681>
foaf:homepage <https://doi.org/10.1109/ASICON.2017.8252681>
dc:identifier DBLP conf/asicon/TsutsuiKHNNWMSM17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASICON.2017.8252681 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label 3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Nakajima>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Atsushi_Ogura>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/H._Ohashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Iwai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hitoshi_Wakabayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ichiro_Omura>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Iriya_Muneta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/K._Itou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/K._Sato>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuo_Tsutsui>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kuniyuki_Kakushima>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Fukui>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masaharu_Kobayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Suzuki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shinichi_Nishizawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/T._Takakura>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takuya_Hoshii>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takuya_Saraya>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tomoko_Matsudai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshiro_Hiramoto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wataru_Saito>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Numasawa>
swrc:pages 1137-1140 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ASICON.2017.8252681>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/asicon>
dc:title 3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document