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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haimeng_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haoran_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hongqiang_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junji_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/MouFu_Kong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wenkun_Shi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yilin_Guo>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASICON58565.2023.10396464>
foaf:homepage <https://doi.org/10.1109/ASICON58565.2023.10396464>
dc:identifier DBLP conf/asicon/YiHHKGSCY23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASICON58565.2023.10396464 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Yi>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junji_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/MouFu_Kong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wenkun_Shi>
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swrc:series <https://dblp.l3s.de/d2r/resource/conferences/asicon>
dc:title Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document