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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/aspdac/ShinHKC07>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyung-Ock_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jung_Yun_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sewan_Heo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Youngsoo_Shin>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASPDAC.2007.358061>
foaf:homepage <https://doi.org/10.1109/ASPDAC.2007.358061>
dc:identifier DBLP conf/aspdac/ShinHKC07 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASPDAC.2007.358061 (xsd:string)
dcterms:issued 2007 (xsd:gYear)
rdfs:label Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyung-Ock_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jung_Yun_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sewan_Heo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Youngsoo_Shin>
swrc:pages 654-659 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/aspdac/2007>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/aspdac/ShinHKC07/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/aspdac/ShinHKC07>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/aspdac/aspdac2007.html#ShinHKC07>
rdfs:seeAlso <https://doi.org/10.1109/ASPDAC.2007.358061>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/aspdac>
dc:subject 90 nm, subthreshold leakage current, gate leakage current, nanometer-scale CMOS circuits, power gating, supply switching, ground collapse, standard-cell elements, 45 nm, 65 nm (xsd:string)
dc:title Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document