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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/aspdac/UenoHAA09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ken_Ueno>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Asai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Hirose>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yoshihito_Amemiya>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FASPDAC.2009.4796449>
foaf:homepage <https://doi.org/10.1109/ASPDAC.2009.4796449>
dc:identifier DBLP conf/aspdac/UenoHAA09 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FASPDAC.2009.4796449 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
rdfs:label A 300 nW, 7 ppm/degreeC CMOS voltage reference circuit based on subthreshold MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ken_Ueno>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Asai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Hirose>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yoshihito_Amemiya>
swrc:pages 95-96 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/aspdac/2009>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/aspdac/UenoHAA09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/aspdac/UenoHAA09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/aspdac/aspdac2009.html#UenoHAA09>
rdfs:seeAlso <https://doi.org/10.1109/ASPDAC.2009.4796449>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/aspdac>
dc:title A 300 nW, 7 ppm/degreeC CMOS voltage reference circuit based on subthreshold MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document