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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/aspdac/YangWWVX05>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Narayanan_Vijaykrishnan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shengqi_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wayne_H._Wolf>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wenping_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuan_Xie_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F1120725.1120957>
foaf:homepage <https://doi.org/10.1145/1120725.1120957>
dc:identifier DBLP conf/aspdac/YangWWVX05 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F1120725.1120957 (xsd:string)
dcterms:issued 2005 (xsd:gYear)
rdfs:label Low-leakage robust SRAM cell design for sub-100nm technologies. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Narayanan_Vijaykrishnan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shengqi_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wayne_H._Wolf>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wenping_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuan_Xie_0001>
swrc:pages 539-544 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/aspdac/2005>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/aspdac/YangWWVX05/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/aspdac/YangWWVX05>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/aspdac/aspdac2005.html#YangWWVX05>
rdfs:seeAlso <https://doi.org/10.1145/1120725.1120957>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/aspdac>
dc:title Low-leakage robust SRAM cell design for sub-100nm technologies. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document