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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ats/UedaSIS20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Aoi_Ueda>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michihiro_Shintani>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michiko_Inoue>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takashi_Sato>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FATS49688.2020.9301598>
foaf:homepage <https://doi.org/10.1109/ATS49688.2020.9301598>
dc:identifier DBLP conf/ats/UedaSIS20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FATS49688.2020.9301598 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
rdfs:label Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Aoi_Ueda>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michihiro_Shintani>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michiko_Inoue>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takashi_Sato>
swrc:pages 1-6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/ats/2020>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/ats/UedaSIS20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/ats/UedaSIS20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/ats/ats2020.html#UedaSIS20>
rdfs:seeAlso <https://doi.org/10.1109/ATS49688.2020.9301598>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ats>
dc:title Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document