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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/bcicts/MauretteBlasiniWWSCQ23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cristina_Maurette-Blasini>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dirk_Schwantuschke>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R%E2%88%9A%C4%BEdiger_Quay>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rainer_Weber>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S%E2%88%9A%C2%A9bastien_Chartier>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sandrine_Wagner>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FBCICTS54660.2023.10310862>
foaf:homepage <https://doi.org/10.1109/BCICTS54660.2023.10310862>
dc:identifier DBLP conf/bcicts/MauretteBlasiniWWSCQ23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FBCICTS54660.2023.10310862 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cristina_Maurette-Blasini>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dirk_Schwantuschke>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R%E2%88%9A%C4%BEdiger_Quay>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rainer_Weber>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S%E2%88%9A%C2%A9bastien_Chartier>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sandrine_Wagner>
swrc:pages 288-291 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/bcicts/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/bcicts/MauretteBlasiniWWSCQ23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/bcicts/MauretteBlasiniWWSCQ23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/bcicts/bcicts2023.html#MauretteBlasiniWWSCQ23>
rdfs:seeAlso <https://doi.org/10.1109/BCICTS54660.2023.10310862>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/bcicts>
dc:title Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document