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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/cicc/KobayashiNHNN18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Atsuki_Kobayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuo_Nakazato>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kenya_Hayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kiichi_Niitsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuya_Nishio>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FCICC.2018.8357093>
foaf:homepage <https://doi.org/10.1109/CICC.2018.8357093>
dc:identifier DBLP conf/cicc/KobayashiNHNN18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FCICC.2018.8357093 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label A 350-mV, under-200-ppm allan deviation floor gate-leakage-based timer using an amplifier-less replica-bias switching technique in 55-nm DDC CMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Atsuki_Kobayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuo_Nakazato>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kenya_Hayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kiichi_Niitsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuya_Nishio>
swrc:pages 1-4 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/cicc/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/cicc/KobayashiNHNN18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/cicc/KobayashiNHNN18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/cicc/cicc2018.html#KobayashiNHNN18>
rdfs:seeAlso <https://doi.org/10.1109/CICC.2018.8357093>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/cicc>
dc:title A 350-mV, under-200-ppm allan deviation floor gate-leakage-based timer using an amplifier-less replica-bias switching technique in 55-nm DDC CMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document