A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0031>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Chun-wang_Zhuang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jian-Jun_Kuang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Peng_Luo>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Xin_Ming>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yao_Qin>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Zhi-Jiu_Wu>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Zhiyi_Lin>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FCICC57935.2023.10121182>
foaf:homepage	<https://doi.org/10.1109/CICC57935.2023.10121182>
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dcterms:issued	2023 (xsd:gYear)
rdfs:label	A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0031>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Chun-wang_Zhuang>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jian-Jun_Kuang>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Peng_Luo>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Xin_Ming>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yao_Qin>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Zhi-Jiu_Wu>
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dc:title	A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28. (xsd:string)
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