A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/cicc/SuSLYLXCHCDH03
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A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics.
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A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics.
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