[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/csndsp/FonsecaNDRDSL20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anderson_L._Sanches>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Iyad_Dayoub>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Murilo_Bellezoni_Loiola>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rafael_N%E2%88%9A%E2%89%A5brega>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thiago_R._Raddo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ulysses_Duarte>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ygor_Fonseca>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FCSNDSP49049.2020.9249531>
foaf:homepage <https://doi.org/10.1109/CSNDSP49049.2020.9249531>
dc:identifier DBLP conf/csndsp/FonsecaNDRDSL20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FCSNDSP49049.2020.9249531 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
rdfs:label Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anderson_L._Sanches>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Iyad_Dayoub>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Murilo_Bellezoni_Loiola>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rafael_N%E2%88%9A%E2%89%A5brega>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thiago_R._Raddo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ulysses_Duarte>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ygor_Fonseca>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/csndsp/2020>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/csndsp/FonsecaNDRDSL20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/csndsp/FonsecaNDRDSL20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/csndsp/csndsp2020.html#FonsecaNDRDSL20>
rdfs:seeAlso <https://doi.org/10.1109/CSNDSP49049.2020.9249531>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/csndsp>
dc:title Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document