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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/dac/AnanthanR06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hari_Ananthan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Roy_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F1146909.1147020>
foaf:homepage <https://doi.org/10.1145/1146909.1147020>
dc:identifier DBLP conf/dac/AnanthanR06 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F1146909.1147020 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
rdfs:label A fully physical model for leakage distribution under process variations in Nanoscale double-gate CMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hari_Ananthan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Roy_0001>
swrc:pages 413-418 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/dac/2006>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/dac/AnanthanR06/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/dac/AnanthanR06>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/dac/dac2006.html#AnanthanR06>
rdfs:seeAlso <https://doi.org/10.1145/1146909.1147020>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/dac>
dc:subject double-gate, finFET, leakage distribution, multiple-gate, process variations, tri-gate (xsd:string)
dc:title A fully physical model for leakage distribution under process variations in Nanoscale double-gate CMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document