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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/drc/HarrisonSFVN18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Clint_D._Frye>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lars_F._Voss>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qinghui_Shao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rebecca_J._Nikolic>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sara_E._Harrison>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FDRC.2018.8442240>
foaf:homepage <https://doi.org/10.1109/DRC.2018.8442240>
dc:identifier DBLP conf/drc/HarrisonSFVN18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FDRC.2018.8442240 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label 1.1 kV vertical p-i-n GaN-on-sapphire diodes. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Clint_D._Frye>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lars_F._Voss>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qinghui_Shao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rebecca_J._Nikolic>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sara_E._Harrison>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/drc/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/drc/HarrisonSFVN18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/drc/HarrisonSFVN18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/drc/drc2018.html#HarrisonSFVN18>
rdfs:seeAlso <https://doi.org/10.1109/DRC.2018.8442240>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/drc>
dc:title 1.1 kV vertical p-i-n GaN-on-sapphire diodes. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document