Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ‚ąľ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal.
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ‚ąľ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal.
(xsd:string)
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ‚ąľ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal.
(xsd:string)
![[RDF data]](https://dblp.l3s.de/d2r/snorql/rdf_flyer.24.gif)