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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/drc/MiyaoTIINISTU22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiroki_Ishikuro>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Itsuki_Imanishi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ken_Uchida>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masayuki_Ichikawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Munehiro_Tada>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shuya_Nakagawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takahisa_Tanaka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tomohisa_Miyao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshitsugu_Sakamoto>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FDRC55272.2022.9855815>
foaf:homepage <https://doi.org/10.1109/DRC55272.2022.9855815>
dc:identifier DBLP conf/drc/MiyaoTIINISTU22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FDRC55272.2022.9855815 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hiroki_Ishikuro>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Itsuki_Imanishi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ken_Uchida>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masayuki_Ichikawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Munehiro_Tada>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shuya_Nakagawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takahisa_Tanaka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tomohisa_Miyao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshitsugu_Sakamoto>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/drc/2022>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/drc/MiyaoTIINISTU22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/drc/MiyaoTIINISTU22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/drc/drc2022.html#MiyaoTIINISTU22>
rdfs:seeAlso <https://doi.org/10.1109/DRC55272.2022.9855815>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/drc>
dc:title Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document