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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/drc/SaraswatLNJX20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Debdeep_Jena>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Devansh_Saraswat>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huili_Grace_Xing>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuki_Nomoto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wenshen_Li>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FDRC50226.2020.9135177>
foaf:homepage <https://doi.org/10.1109/DRC50226.2020.9135177>
dc:identifier DBLP conf/drc/SaraswatLNJX20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FDRC50226.2020.9135177 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
rdfs:label Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Debdeep_Jena>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Devansh_Saraswat>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huili_Grace_Xing>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuki_Nomoto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wenshen_Li>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/drc/2020>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/drc/drc2020.html#SaraswatLNJX20>
rdfs:seeAlso <https://doi.org/10.1109/DRC50226.2020.9135177>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/drc>
dc:title Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document