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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/drc/StecconiPGHFPHB22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_La_Porta>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mattia_Halter>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Roberto_Guido>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tommaso_Stecconi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Valeria_Bragaglia>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Youri_Popoff>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FDRC55272.2022.9855784>
foaf:homepage <https://doi.org/10.1109/DRC55272.2022.9855784>
dc:identifier DBLP conf/drc/StecconiPGHFPHB22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FDRC55272.2022.9855784 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_La_Porta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bert_J._Offrein>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Donato_Francesco_Falcone>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tommaso_Stecconi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Valeria_Bragaglia>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Youri_Popoff>
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rdfs:seeAlso <https://doi.org/10.1109/DRC55272.2022.9855784>
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dc:title Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document