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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/drc/ThenDRGSF19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Han_Wui_Then>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marko_Radosavljevic>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Paul_Fischer>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sanaz_Gardner>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sansaptak_Dasgupta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seung-Hoon_Sung>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FDRC46940.2019.9046449>
foaf:homepage <https://doi.org/10.1109/DRC46940.2019.9046449>
dc:identifier DBLP conf/drc/ThenDRGSF19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FDRC46940.2019.9046449 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Han_Wui_Then>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marko_Radosavljevic>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Paul_Fischer>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sanaz_Gardner>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sansaptak_Dasgupta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seung-Hoon_Sung>
swrc:pages 39-40 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/drc/2019>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/drc/drc2019.html#ThenDRGSF19>
rdfs:seeAlso <https://doi.org/10.1109/DRC46940.2019.9046449>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/drc>
dc:title High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document