Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/ei-iss/HaqueDFGHKKRWY12
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/ei-iss/HaqueDFGHKKRWY12
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/A._Karcher
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/F._Dion
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/G._Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/N._A._Roe
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/R._Frost
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/R._Groulx
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._E._Holland
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Haque
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/W._F._Kolbe
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Y._Yu
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1117%2F12.905460
>
foaf:
homepage
<
https://doi.org/10.1117/12.905460
>
dc:
identifier
DBLP conf/ei-iss/HaqueDFGHKKRWY12
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1117%2F12.905460
(xsd:string)
dcterms:
issued
2012
(xsd:gYear)
rdfs:
label
Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/A._Karcher
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/F._Dion
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/G._Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/N._A._Roe
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/R._Frost
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/R._Groulx
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._E._Holland
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Haque
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/W._F._Kolbe
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Y._Yu
>
swrc:
pages
82980X
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/ei-iss/2012
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/ei-iss/HaqueDFGHKKRWY12/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/ei-iss/HaqueDFGHKKRWY12
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/ei-iss/ei-iss2012.html#HaqueDFGHKKRWY12
>
rdfs:
seeAlso
<
https://doi.org/10.1117/12.905460
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/ei-iss
>
dc:
title
Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document