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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/eitce/ZhangHZJ023>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dongqing_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shiyu_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xintian_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu_Wu_0015>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yunpeng_Jia>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F3650400.3650412>
foaf:homepage <https://doi.org/10.1145/3650400.3650412>
dc:identifier DBLP conf/eitce/ZhangHZJ023 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F3650400.3650412 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Optimized Design of Trench Termination for High-Voltage ő≤-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dongqing_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shiyu_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xintian_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu_Wu_0015>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yunpeng_Jia>
swrc:pages 66-72 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/eitce/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/eitce/ZhangHZJ023/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/eitce/ZhangHZJ023>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/eitce/eitce2023.html#ZhangHZJ023>
rdfs:seeAlso <https://doi.org/10.1145/3650400.3650412>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/eitce>
dc:title Optimized Design of Trench Termination for High-Voltage ő≤-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document