Optimized Design of Trench Termination for High-Voltage ő≤-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/eitce/ZhangHZJ023
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Optimized Design of Trench Termination for High-Voltage ő≤-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
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Optimized Design of Trench Termination for High-Voltage ő≤-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
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