High-k/metal gate innovations enabling continued CMOS scaling. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dcterms:bibliographicCitation	<http://dblp.uni-trier.de/rec/bibtex/conf/esscirc/Frank11>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Martin_M._Frank>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FESSCIRC.2011.6044913>
foaf:homepage	<https://doi.org/10.1109/ESSCIRC.2011.6044913>
dc:identifier	DBLP conf/esscirc/Frank11 (xsd:string)
dc:identifier	DOI doi.org%2F10.1109%2FESSCIRC.2011.6044913 (xsd:string)
dcterms:issued	2011 (xsd:gYear)
rdfs:label	High-k/metal gate innovations enabling continued CMOS scaling. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Martin_M._Frank>
swrc:pages	50-58 (xsd:string)
dcterms:partOf	<https://dblp.l3s.de/d2r/resource/publications/conf/esscirc/2011>
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rdfs:seeAlso	<http://dblp.uni-trier.de/db/conf/esscirc/esscirc2011.html#Frank11>
rdfs:seeAlso	<https://doi.org/10.1109/ESSCIRC.2011.6044913>
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dc:title	High-k/metal gate innovations enabling continued CMOS scaling. (xsd:string)
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