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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/esscirc/ValentianB07>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alexandre_Valentian>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Edith_Beign%E2%88%9A%C2%A9>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSCIRC.2007.4430303>
foaf:homepage <https://doi.org/10.1109/ESSCIRC.2007.4430303>
dc:identifier DBLP conf/esscirc/ValentianB07 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSCIRC.2007.4430303 (xsd:string)
dcterms:issued 2007 (xsd:gYear)
rdfs:label Gate bias circuit for an SCCMOS power switch achieving maximum leakage reduction. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alexandre_Valentian>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Edith_Beign%E2%88%9A%C2%A9>
swrc:pages 300-303 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/esscirc/2007>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/esscirc/ValentianB07/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/esscirc/ValentianB07>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/esscirc/esscirc2007.html#ValentianB07>
rdfs:seeAlso <https://doi.org/10.1109/ESSCIRC.2007.4430303>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/esscirc>
dc:title Gate bias circuit for an SCCMOS power switch achieving maximum leakage reduction. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document