Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.
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Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.
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Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.
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