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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/BassoSM23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Andrea_Marcovati>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marco_Sambi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michele_Basso>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC59256.2023.10268485>
foaf:homepage <https://doi.org/10.1109/ESSDERC59256.2023.10268485>
dc:identifier DBLP conf/essderc/BassoSM23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC59256.2023.10268485 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Characterization and Modeling of High Voltage MOS Robustness During Recirculation in Smart Power technologies. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Andrea_Marcovati>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marco_Sambi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michele_Basso>
swrc:pages 156-159 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/BassoSM23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/BassoSM23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2023.html#BassoSM23>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC59256.2023.10268485>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Characterization and Modeling of High Voltage MOS Robustness During Recirculation in Smart Power technologies. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document