Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/BisiMSCPNLZM13
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/BisiMSCPNLZM13
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Alessio_Pantellini
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Nanni
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Stocco
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Claudio_Lanzieri
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Davide_Bisi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Giulia_Cibin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818819
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC.2013.6818819
>
dc:
identifier
DBLP conf/essderc/BisiMSCPNLZM13
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC.2013.6818819
(xsd:string)
dcterms:
issued
2013
(xsd:gYear)
rdfs:
label
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Alessio_Pantellini
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Nanni
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Stocco
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Claudio_Lanzieri
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Davide_Bisi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Giulia_Cibin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini
>
swrc:
pages
61-64
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/BisiMSCPNLZM13/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/BisiMSCPNLZM13
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#BisiMSCPNLZM13
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC.2013.6818819
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document