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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/BisiMSCPNLZM13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alessio_Pantellini>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Nanni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Stocco>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Claudio_Lanzieri>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Davide_Bisi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Giulia_Cibin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818819>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2013.6818819>
dc:identifier DBLP conf/essderc/BisiMSCPNLZM13 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2013.6818819 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
rdfs:label Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alessio_Pantellini>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Nanni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Stocco>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Claudio_Lanzieri>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Davide_Bisi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Giulia_Cibin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
swrc:pages 61-64 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#BisiMSCPNLZM13>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2013.6818819>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document