[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/EfthymiouALU22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Florin_Udrea>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Giorgia_Longobardi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Loizos_Efthymiou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Martin_Arnold>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC55479.2022.9947100>
foaf:homepage <https://doi.org/10.1109/ESSDERC55479.2022.9947100>
dc:identifier DBLP conf/essderc/EfthymiouALU22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC55479.2022.9947100 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Florin_Udrea>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Giorgia_Longobardi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Loizos_Efthymiou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Martin_Arnold>
swrc:pages 396-399 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2022>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/EfthymiouALU22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/EfthymiouALU22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2022.html#EfthymiouALU22>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC55479.2022.9947100>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document