[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/JangBYMKCRDM13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Abdelkarim_Mercha>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dmitry_Yakimets>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Doyoung_Jang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marie_Garcia_Bardon>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Morin_Dehan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818843>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2013.6818843>
dc:identifier DBLP conf/essderc/JangBYMKCRDM13 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2013.6818843 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
rdfs:label STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abdelkarim_Mercha>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dmitry_Yakimets>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Doyoung_Jang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marie_Garcia_Bardon>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Morin_Dehan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella>
swrc:pages 159-162 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/JangBYMKCRDM13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/JangBYMKCRDM13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#JangBYMKCRDM13>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2013.6818843>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document