STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/JangBYMKCRDM13
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/JangBYMKCRDM13
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Abdelkarim_Mercha
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dmitry_Yakimets
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Doyoung_Jang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Marie_Garcia_Bardon
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Morin_Dehan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818843
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC.2013.6818843
>
dc:
identifier
DBLP conf/essderc/JangBYMKCRDM13
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC.2013.6818843
(xsd:string)
dcterms:
issued
2013
(xsd:gYear)
rdfs:
label
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Abdelkarim_Mercha
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dmitry_Yakimets
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Doyoung_Jang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Marie_Garcia_Bardon
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Morin_Dehan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella
>
swrc:
pages
159-162
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/JangBYMKCRDM13/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/JangBYMKCRDM13
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#JangBYMKCRDM13
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC.2013.6818843
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document