GeSn Vertical Gate-all-around Nanowire n-type MOSFETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/JunkFHDBHGBZ22
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/JunkFHDBHGBZ22
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dan_Buca
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Detlev_Gr%E2%88%9A%C4%BEtzmacher
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jean-Michel_Hartmann
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jin-Hee_Bae
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Marvin_Frauenrath
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Omar_Concepci%E2%88%9A%E2%89%A5n_Diaz
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Qing-Tai_Zhao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yannik_Junk
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yi_Han
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC55479.2022.9947133
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC55479.2022.9947133
>
dc:
identifier
DBLP conf/essderc/JunkFHDBHGBZ22
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC55479.2022.9947133
(xsd:string)
dcterms:
issued
2022
(xsd:gYear)
rdfs:
label
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dan_Buca
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Detlev_Gr%E2%88%9A%C4%BEtzmacher
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jean-Michel_Hartmann
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jin-Hee_Bae
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Marvin_Frauenrath
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Omar_Concepci%E2%88%9A%E2%89%A5n_Diaz
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Qing-Tai_Zhao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yannik_Junk
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yi_Han
>
swrc:
pages
364-367
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2022
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/JunkFHDBHGBZ22/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/JunkFHDBHGBZ22
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2022.html#JunkFHDBHGBZ22
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC55479.2022.9947133
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document