Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/KothariJVNCGL15
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/KothariJVNCGL15
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Benjamin_Colombeau
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chandan_Joishi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dhirendra_Vaidya
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Hasan_Nejad
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Saurabh_Lodha
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shraddha_Kothari
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Swaroop_Ganguly
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2015.7324753
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC.2015.7324753
>
dc:
identifier
DBLP conf/essderc/KothariJVNCGL15
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC.2015.7324753
(xsd:string)
dcterms:
issued
2015
(xsd:gYear)
rdfs:
label
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Benjamin_Colombeau
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chandan_Joishi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dhirendra_Vaidya
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Hasan_Nejad
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Saurabh_Lodha
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shraddha_Kothari
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Swaroop_Ganguly
>
swrc:
pages
214-217
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2015
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/KothariJVNCGL15/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/KothariJVNCGL15
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2015.html#KothariJVNCGL15
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC.2015.7324753
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document