[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/KoyamaCCBGIR13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gilles_Reimbold>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Iwai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masahiro_Koyama>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mika%E2%88%9A%C4%99l_Cass%E2%88%9A%C2%A9>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Remi_Coquand>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sylvain_Barraud>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818878>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2013.6818878>
dc:identifier DBLP conf/essderc/KoyamaCCBGIR13 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2013.6818878 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
rdfs:label Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gilles_Reimbold>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Iwai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masahiro_Koyama>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mika%E2%88%9A%C4%99l_Cass%E2%88%9A%C2%A9>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Remi_Coquand>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sylvain_Barraud>
swrc:pages 300-303 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/KoyamaCCBGIR13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/KoyamaCCBGIR13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#KoyamaCCBGIR13>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2013.6818878>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document