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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/MizubayashiFMELMOIMMTTYMO13>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiromi_Yamauchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiroyuki_Ota>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junichi_Tsukada>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuhiko_Endo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Koichi_Fukuda>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Meishoku_Masahara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shin-ichi_O%27Uchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shinji_Migita>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takashi_Matsukawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wataru_Mizubayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yongxun_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuki_Ishikawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yukinori_Morita>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818854>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2013.6818854>
dc:identifier DBLP conf/essderc/MizubayashiFMELMOIMMTTYMO13 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2013.6818854 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
rdfs:label Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Akihito_Tanabe>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hiroyuki_Ota>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junichi_Tsukada>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuhiko_Endo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Koichi_Fukuda>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Meishoku_Masahara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shin-ichi_O%27Uchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shinji_Migita>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takahiro_Mori>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wataru_Mizubayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yongxun_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuki_Ishikawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yukinori_Morita>
swrc:pages 202-205 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#MizubayashiFMELMOIMMTTYMO13>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2013.6818854>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document