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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/OlivaCCI18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Adrian_M._Ionescu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Emanuele_A._Casu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Cavalleri>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nicolo_Oliva>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2018.8486867>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2018.8486867>
dc:identifier DBLP conf/essderc/OlivaCCI18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2018.8486867 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Adrian_M._Ionescu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Emanuele_A._Casu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Cavalleri>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nicolo_Oliva>
swrc:pages 114-117 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/OlivaCCI18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/OlivaCCI18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2018.html#OlivaCCI18>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2018.8486867>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document