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foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2015.7324752>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2015.7324752>
dc:identifier DBLP conf/essderc/Pelloux-PrayerC15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2015.7324752 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fran%E2%88%9A%C3%9Fois_Triozon>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J.-L._Rouviere>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Pelloux-Prayer>
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swrc:pages 210-213 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2015.7324752>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. (xsd:string)
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rdf:type swrc:InProceedings
rdf:type foaf:Document