Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/Pelloux-PrayerC15
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fran%E2%88%9A%C3%9Fois_Triozon
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Gilles_Reimbold
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J.-L._Rouviere
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J._Pelloux-Prayer
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mika%E2%88%9A%C4%99l_Cass%E2%88%9A%C2%A9
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Olivier_Faynot
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sylvain_Barraud
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yann-Michel_Niquet
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2015.7324752
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC.2015.7324752
>
dc:
identifier
DBLP conf/essderc/Pelloux-PrayerC15
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC.2015.7324752
(xsd:string)
dcterms:
issued
2015
(xsd:gYear)
rdfs:
label
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fran%E2%88%9A%C3%9Fois_Triozon
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Gilles_Reimbold
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J.-L._Rouviere
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J._Pelloux-Prayer
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mika%E2%88%9A%C4%99l_Cass%E2%88%9A%C2%A9
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Olivier_Faynot
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sylvain_Barraud
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yann-Michel_Niquet
>
swrc:
pages
210-213
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2015
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/Pelloux-PrayerC15/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/Pelloux-PrayerC15
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2015.html#Pelloux-PrayerC15
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC.2015.7324752
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document