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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/PhamJCLCKLP14>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anh-Tuan_Pham>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/K.-H._Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._J._Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._H._Cho>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seonghoon_Jin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Woosung_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y.-T._Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Park>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2014.6948771>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2014.6948771>
dc:identifier DBLP conf/essderc/PhamJCLCKLP14 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2014.6948771 (xsd:string)
dcterms:issued 2014 (xsd:gYear)
rdfs:label InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anh-Tuan_Pham>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/K.-H._Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._J._Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._H._Cho>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seonghoon_Jin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Woosung_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y.-T._Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Park>
swrc:pages 114-117 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2014.html#PhamJCLCKLP14>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2014.6948771>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document