Probing defects generation during stress in high-őļ/metal gate FinFETs by random telegraph noise characterization.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/PuglisiCKLP16
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Probing defects generation during stress in high-őļ/metal gate FinFETs by random telegraph noise characterization.
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