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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/essderc/TakahashiKSSO19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Kawaguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masaru_Sato_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michihiko_Suhara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Naoya_Okamoto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Takahashi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2019.8901802>
foaf:homepage <https://doi.org/10.1109/ESSDERC.2019.8901802>
dc:identifier DBLP conf/essderc/TakahashiKSSO19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FESSDERC.2019.8901802 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Kawaguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masaru_Sato_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michihiko_Suhara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Naoya_Okamoto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Takahashi>
swrc:pages 214-217 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2019>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/essderc/TakahashiKSSO19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/essderc/TakahashiKSSO19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/essderc/essderc2019.html#TakahashiKSSO19>
rdfs:seeAlso <https://doi.org/10.1109/ESSDERC.2019.8901802>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/essderc>
dc:title Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document